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IXFN60N80P
800V, 53A, IXYS IXFN60N80P N-channel MOSFET Transistor & Diode, 4-Pin SOT-227B
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Manufacturer:
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Mfr.Part #:
IXFN60N80P
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Datasheet:
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Drain-Source Voltage (V):
800
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Maximum On-Resistance @ 25 ℃ (Ohm):
0.14
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Continuous Drain Current @ 25 ℃ (A):
53
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Gate Charge (nC):
250
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EDA/CAD Models:
Availability: 5444 PCS
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IXFN60N80P General Description
Polar™ HiPerFETs (IXF) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability.
Key Features
- International Standard Packages
- Dynamic dv/dt Rating
- Avalanche Rated
- Fast Intrinsic Rectifier
- Low Q
- G
- and R
- DS(on)
- Low Drain-to-Tab Capacitance
- Low Package Inductance
- Advantages:
- Easy to Mount
- Space Savings
Application
- Switch-Mode and Resonant-Mode Power Supplies
- DC-DC Converters
- Battery Chargers
- Uninterrupted Power Supplies
- AC Motor Drives
Specifications
Drain-Source Voltage (V) | 800 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.14 |
Continuous Drain Current @ 25 ℃ (A) | 53 | Gate Charge (nC) | 250 |
Input Capacitance, CISS (pF) | 18000 | Thermal resistance [junction-case] (K/W) | 0.12 |
Configuration | Single | Power Dissipation (W) | 1040 |
Maximum Reverse Recovery (ns) | 250 | Sample Request | Yes |
Check Stock | Yes |
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Availability: 5444 PCS
+BOMQty. | Unit Price | Ext. Price |
---|---|---|
1+ | $18.003 | $18.00 |
10+ | $17.350 | $173.50 |
30+ | $16.221 | $486.63 |
100+ | $15.233 | $1,523.30 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IXFN60N80P, guaranteed quotes back within 12hr.
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