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IXFN50N50 +BOM

Discrete Semiconductor Modules with 50 Amps and 500V rating, featuring a low 0.1 Ohm Rds

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IXFN50N50 General Description

N-Channel 500 V 50A (Tc) 600W (Tc) Chassis Mount SOT-227B

Key Features

  • Single Die MOSFET
  • Features
  • International standard packages
  • Encapsulating epoxy meets
  • UL 94 V-0, flammability classification
  • miniBLOC with Aluminium nitride
  • isolation
  • Low RDS (on) HDMOSTM process
  • Rugged polysilicon gate cell structure
  • Unclamped Inductive Switching (UIS)
  • rated
  • Low package inductance
  • Fast intrinsic Rectifier
  • Applications
  • DC-DC converters
  • Battery chargers
  • Switched-mode and resonant-mode
  • power supplies
  • DC choppers
  • Temperature and lighting controls
  • Advantages
  • Easy to mount
  • Space savings
  • High power density

Specifications

Product Category Discrete Semiconductor Modules Product Power MOSFET Modules
Technology Si Vgs - Gate-Source Voltage - 20 V, + 20 V
Mounting Style Chassis Mount Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series IXFN50N50
Configuration Single Fall Time 45 ns
Height 9.6 mm Id - Continuous Drain Current 50 A
Length 38.23 mm Number of Channels 1 Channel
Pd - Power Dissipation 600 W Product Type Discrete Semiconductor Modules
Rds On - Drain-Source Resistance 100 mOhms Rise Time 60 ns
Factory Pack Quantity 10 Subcategory Discrete Semiconductor Modules
Tradename HyperFET Transistor Polarity N-Channel
Typical Turn-Off Delay Time 120 ns Typical Turn-On Delay Time 45 ns
Vds - Drain-Source Breakdown Voltage 500 V Width 25.42 mm
Unit Weight 1.058219 oz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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