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IXFN48N50 +BOM
With a power dissipation of 520W
SOT-227-4-
Manufacturer:
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Mfr.Part #:
IXFN48N50
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Datasheet:
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Drain-Source Voltage (V):
500
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Maximum On-Resistance @ 25 ℃ (Ohm):
0.1
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Continuous Drain Current @ 25 ℃ (A):
48
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Gate Charge (nC):
270
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EDA/CAD Models:
Availability: 5859 PCS
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IXFN48N50 General Description
The N-Channel HiPerFET™ Standard series, among which product IXFN48N50 excels, is a sought-after collection of Power MOSFETs known for their versatility and reliability. Whether tackling hard switching or resonant mode applications, this series delivers unrivaled performance with its low gate charge and robust design. The fast intrinsic diode integrated into these MOSFETs further enhances their efficiency, making them a top choice for industrial usage. Moreover, the availability of a variety of standard industrial packages, including isolated types, ensures that these MOSFETs can be seamlessly integrated into different systems and setups
Key Features
- International Standard Packages
- High Current Handling Capability
- Low R
- DS(on)
- HDMOS process
- Avalanche Rated
- Low Package Inductance
- Fast intrinsic diode
Application
- DC-DC converters
- Battery chargers
- Switched-mode and resonant-mode power supplies
- DC choppers
- AC Motor Drives
- Temperature and Lighting Controls
- Advantages:
- Easy to mount
- Space savings
- High power density
Specifications
Drain-Source Voltage (V) | 500 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.1 |
Continuous Drain Current @ 25 ℃ (A) | 48 | Gate Charge (nC) | 270 |
Input Capacitance, CISS (pF) | 8400 | Thermal resistance [junction-case] (K/W) | 0.24 |
Configuration | Single | Power Dissipation (W) | 521 |
Maximum Reverse Recovery (ns) | 250 | Sample Request | No |
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In Stock: 5,859
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $27.731 | $27.73 |
30+ | $26.810 | $804.30 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IXFN48N50, guaranteed quotes back within 12hr.