WOLFSPEED, INC

Wolfspeed, Inc. is a semiconductor company that focuses on the design, development, and manufacturing of wide bandgap semiconductors and solutions. Formerly known as Cree, Inc., the company changed its name to Wolfspeed in 2016 to emphasize its focus on silicon carbide (SiC) and gallium nitride (GaN) technologies.

Wolfspeed specializes in power and radio frequency (RF) semiconductors, offering a range of products and solutions for various industries, including automotive, industrial, telecommunications, and energy.

The company's product portfolio includes:

Power Semiconductors: Wolfspeed is a leading provider of silicon carbide (SiC) power semiconductors, including MOSFETs, Schottky diodes, and power modules. SiC technology offers higher efficiency, higher power density, and improved thermal management compared to traditional silicon-based power devices.

RF Components: Wolfspeed develops and manufactures RF power amplifiers, RF transistors, and other RF components based on gallium nitride (GaN) technology. GaN devices offer higher power efficiency, higher operating frequencies, and improved linearity, making them suitable for various RF and microwave applications.

Power Modules and Systems: Wolfspeed offers power modules and systems that integrate their SiC power semiconductors into complete power conversion and control solutions. These modules and systems are designed to deliver efficient and reliable power management for applications such as electric vehicles, renewable energy, and industrial power systems.

Wolfspeed's solutions are known for their high performance, reliability, and ability to operate in harsh environments. The company serves customers globally, including manufacturers, system integrators, and technology partners.

In addition to its product offerings, Wolfspeed provides technical support, design tools, and application expertise to assist customers in incorporating their wide bandgap semiconductor solutions into their systems. The company also engages in research and development to advance the capabilities and applications of SiC and GaN technologies.