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CGHV96050F1 +BOM

RF Mosfet 40 V 500 mA 7.9GHz ~ 9.6GHz 17dB 32W 440210

Manufacturer:

WOLFSPEED, INC
Mfr.Part #:

CGHV96050F1
Datasheet:

CGHV96050F1 Datasheet (PDF)
Shipping Restrictions:

This product may require additional documentation to export from the United States.
Transistor Type:

HEMT
Technology:

GaN
Operating Frequency:

7.9 GHz to 9.6 GHz
EDA/CAD Models:

Request Free CAD Models for CGHV96050F1

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

RF Mosfet 40 V 500 mA 7.9GHz ~ 9.6GHz 17dB 32W 440210

Product Category:	RF JFET Transistors	Shipping Restrictions:	This product may require additional documentation to export from the United States.
Transistor Type:	HEMT	Technology:	GaN
Operating Frequency:	7.9 GHz to 9.6 GHz	Gain:	16 dB
Transistor Polarity:	N-Channel	Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Breakdown Voltage:	- 10 V to 2 V	Id - Continuous Drain Current:	6 A
Output Power:	80 W	Maximum Drain Gate Voltage:	-
Minimum Operating Temperature:	- 40 C	Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	-	Mounting Style:	Screw Mount
Packaging:	Tray	Application:	-
Class:	-	Configuration:	Single
Development Kit:	CGHV96050F1-TB	Fall Time:	-
Forward Transconductance - Min:	-	Gate-Source Cutoff Voltage:	-
Height:	5.03 mm	Length:	17.55 mm
NF - Noise Figure:	-	Operating Temperature Range:	-
P1dB - Compression Point:	-	Product:	GaN HEMT
Product Type:	RF JFET Transistors	Rds On - Drain-Source Resistance:	-
Rise Time:	-	Factory Pack Quantity:	1
Subcategory:	Transistors	Typical Turn-Off Delay Time:	-
Vgs th - Gate-Source Threshold Voltage:	- 3 V	Width:	24.26 mm