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See Technical Specifications

VQ1000J +BOM

High-Power N-Channel Metal-oxide Semiconductor Field-Effect Transistor

Manufacturer:

Vishay
Mfr.Part #:

VQ1000J
Datasheet:

VQ1000J Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Height:

5.08 mm
Length:

19.3 mm
EDA/CAD Models:

Request Free CAD Models for VQ1000J

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

Key Features

Low On-Resistance: 2.5 Ω
Low Threshold: 2.1 V
Low Input Capacitance: 22 pF
Fast Switching Speed: 7 ns
Low Input and Output Leakage
BENEFITS
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Height	5.08 mm
Length	19.3 mm	Product Type	MOSFET
Factory Pack Quantity	25	Subcategory	MOSFETs
Width	7.11 mm	Unit Weight	0.057144 oz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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In Stock: 7,979

Minimum Order: 1

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