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See Technical Specifications

VP0808L-G

MOSFET, P-Channel Enhancement-Mode, -80V, 5.0 Ohm.

Manufacturer:

Microchip Technology, Inc
Mfr.Part #:

VP0808L-G
Datasheet:

VP0808L-G Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

80 V
Current - Continuous Drain (Id) @ 25°C:

280mA (Tj)
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VP0808L-G General Description

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

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Key Features

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	-
FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V	Current - Continuous Drain (Id) @ 25°C	280mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1mA	Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	150 pF @ 25 V	FET Feature	-
Power Dissipation (Max)	1W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Base Product Number	VP0808
Product Category	MOSFET	Mounting Style	Through Hole
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	80 V	Id - Continuous Drain Current	280 mA
Rds On - Drain-Source Resistance	5 Ohms	Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	1 V	Qg - Gate Charge	-
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1 W	Channel Mode	Enhancement
Configuration	Single	Fall Time	30 ns
Forward Transconductance - Min	200 mS	Height	5.33 mm
Length	5.21 mm	Product Type	MOSFET
Rise Time	40 ns	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Type	FET	Typical Turn-Off Delay Time	30 ns
Typical Turn-On Delay Time	15 ns	Width	4.19 mm
Unit Weight	0.016000 oz

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Ratings and Reviews

L**e 03/10/2024

Thank you very much seller for the goods and fast shipment! It was 6.5 days, put in the mailbox! In appearance, everything is fine, not spoiled by shipment. Volume control with switch, turns off power from battery. The scheme has not yet assembled, as the current will immediately write! Good luck to everyone!

A**a 02/16/2024

Super. Very fast. Of course i recommend, i will take more!!!!

v**n 12/27/2023

One of us didn't work, i hope i didn't break it by welding the sideburns for being a novice. They're so cheap that when i check i'm able to work with the other i'll ask for a few more.

D**o 12/28/2022

Fast shipping.. I'm very satisfied..Thanks~ :)