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VN10KN3-G +BOM

N-Channel 60 V 310mA (Tj) 1W (Tc) Through Hole TO-92-3

Manufacturer:

Microchip Technology, Inc
Mfr.Part #:

VN10KN3-G
Datasheet:

VN10KN3-G Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Number Of Channels:

1 Channel
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for VN10KN3-G

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

VN10KN3-G General Description

Engineers can confidently utilize the VN10KN3-G transistor in a wide range of electronic systems, thanks to its robust design and innovative features. Whether used for switching or amplification tasks, this enhancement-mode device delivers consistent results and reliable operation. Its unique combination of attributes makes it a valuable asset in projects where efficiency and performance are paramount

Key Features

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain

Microchip Technology, Inc Original Stock

Specifications

Product Category:	MOSFET	Technology:	Si
Mounting Style:	Through Hole	Number of Channels:	1 Channel
Transistor Polarity:	N-Channel	Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	310 mA	Rds On - Drain-Source Resistance:	5 Ohms
Vgs th - Gate-Source Threshold Voltage:	800 mV	Vgs - Gate-Source Voltage:	10 V
Minimum Operating Temperature:	- 55 C	Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1 W	Configuration:	Single
Channel Mode:	Enhancement	Packaging:	Bulk
Height:	5.33 mm	Length:	5.21 mm
Transistor Type:	1 N-Channel	Type:	FET
Width:	4.19 mm	Forward Transconductance - Min:	100 mmho
Product Type:	MOSFET	Factory Pack Quantity:	1000
Subcategory:	MOSFETs	Unit Weight:	0.007760 oz
Tags	VN10KN3-G, VN10KN3, VN10KN, VN10K, VN10, VN1	Product Category	MOSFET
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	310 mA
Rds On - Drain-Source Resistance	5 Ohms	Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	800 mV	Qg - Gate Charge	-
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1 W	Channel Mode	Enhancement
Configuration	Single	Forward Transconductance - Min	100 mmho
Height	5.33 mm	Length	5.21 mm
Product Type	MOSFET	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	FET	Width	4.19 mm
Unit Weight	0.016000 oz