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TPN4R806PL

Trans MOSFET N-CH Si 60V 72A

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Toshiba Semiconductor Inventory

Key Features

  • Characteristics
  • Symbol
  • Condition
  • Value
  • Unit
  • Gate threshold voltage (Max)
  • V
  • th
  • 2.5
  • V
  • Drain-Source on-resistance (Max)
  • R
  • DS(ON)
  • GS
  • 9.1
  • mΩ
  • Drain-Source on-resistance (Max)
  • R
  • DS(ON)
  • GS
  • 4.8
  • mΩ
  • Input capacitance (Typ.)
  • C
  • iss
  • 2130
  • pF
  • Total gate charge (Typ.)
  • Q
  • g
  • V
  • GS
  • 29
  • nC
Toshiba Semiconductor Original Stock

Specifications

Continuous Drain Current (ID) 72 A Drain to Source Breakdown Voltage 60 V
Drain to Source Resistance 3.5 mΩ Drain to Source Voltage (Vdss) 60 V
Gate to Source Voltage (Vgs) 20 V Max Junction Temperature (Tj) 175 °C
Max Operating Temperature 175 °C Number of Channels 1
Power Dissipation 104 W Turn-Off Delay Time 27 ns
Turn-On Delay Time 15 ns Height 900 µm

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Ratings and Reviews

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A
A**n 03/26/2024

Delivery took one week. Packed in an antistatic bag, an external envelope-pup.

7
N
N**s 03/13/2021

Come and it pleases, did not try

10
H
H**n 02/22/2020

I work great, I'm happy.

4
A
A**z 02/01/2020

The best Distributor ,Recommend !

19

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TPN4R806PL Datasheet PDF

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