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FF150R12RT4HOSA1

IGBT Module Trench Field Stop Half Bridge 1200 V 150 A 790 W Chassis Mount Module

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FF150R12RT4HOSA1 General Description

IGBT Module Trench Field Stop Half Bridge 1200 V 150 A 790 W Chassis Mount Module

Infineon Technologies CorporationMicrosoft.AspNetCore.Mvc.Localization.LocalizedHtmlString

Key Features

  • Extended operation temperature T
  • vj op
  • Low switching losses
  • Low V
  • CEsat
  • T
  • vj>
  • V
  • CEsat
  • Isolated base plate
  • Standard housing
  • Flexibility
  • Optimal electrical performance
  • Highest reliability
Infineon Technologies CorporationMicrosoft.AspNetCore.Mvc.Localization.LocalizedHtmlString

Application

  • Industrial heating and welding
  • Solutions for photovoltaic energy systems
  • Uninterruptible Power Supplies (UPS)

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules Series C
IGBT Type Trench Field Stop Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200 V Current - Collector (Ic) (Max) 150 A
Power - Max 790 W Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 150A
Current - Collector Cutoff (Max) 1 mA Input Standard
NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Base Product Number FF150R12R
RHoS yes PBFree yes
HalogenFree no Product Category IGBT Modules
Product Type IGBT Modules Subcategory IGBTs
Part # Aliases FF150R12RT4 SP000624908

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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FF150R12RT4HOSA1 Datasheet PDF

Preliminary Specification FF150R12RT4HOSA1 PDF Download

FF150R12RT4HOSA1 PDF Preview

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