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SZMMBZ33VALT1G

Dual Common Anode Zener Diode Protection

SZMMBZ33VALT1G General Description

These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium.

Key Features

  • SOT-23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration
  • Working Peak Reverse Voltage Range - 3 V to 26 V
  • Standard Zener Breakdown Voltage Range - 5.6 V to 33 V
  • Peak Power - 24 or 40 Watts @ 1.0 ms (Unidirectional)
  • ESD Rating of Class N (exceeding 16 kV) per the Human Body Model
  • Maximum Clamping Voltage @ Peak Pulse Current
  • Low Leakage < 5.0 µ A
  • Flammability Rating UL 94V-O Mechanical Characteristics:
  • CASE: Void-free, transfer-molded, thermosetting plastic case
  • FINISH: Corrosion resistant finish, easily solderable
  • MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260 degrees C for 10 Seconds
  • Package designed for optimal automated board assembly
  • Small package size for high density applications
  • Available in 8 mm Tape and Reel
  • Pb-Free Packages are Available
  • AEC-Q101 Qualified and PPAP Capable
  • SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

Application

  • Voltage Regulation
  • Waveform Clipping
  • MOSFET Gate Protection

Specifications

Source Content uid SZMMBZ33VALT1G Pbfree Code Yes
Part Life Cycle Code Active Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8541.10.00.50 Factory Lead Time 55 Weeks
Breakdown Voltage-Max 34.65 V Breakdown Voltage-Min 31.35 V
Breakdown Voltage-Nom 33 V Clamping Voltage-Max 46 V
Configuration COMMON ANODE, 2 ELEMENTS Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE Forward Voltage-Max (VF) 0.9 V
JEDEC-95 Code TO-236 JESD-30 Code R-PDSO-G3
JESD-609 Code e3 Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 40 W Number of Elements 2
Number of Terminals 3 Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL Power Dissipation-Max 0.225 W
Reference Standard AEC-Q101; IEC-61000-4-2 Rep Pk Reverse Voltage-Max 26 V
Reverse Current-Max 0.05 µA Reverse Test Voltage 26 V
Surface Mount YES Technology ZENER
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Type Zener Unidirectional Channels 2
Voltage - Reverse Standoff (Typ) 26V Voltage - Breakdown (Min) 31.35V
Voltage - Clamping (Max) @ Ipp 46V Current - Peak Pulse (10/1000µs) 870mA
Power - Peak Pulse 40W Power Line Protection No
Operating Temperature -55°C ~ 150°C (TJ) Grade Automotive
Qualification AEC-Q101 Mounting Type Surface Mount
Base Product Number SZMMBZ33

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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