This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

SSTJ212

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, PLASTIC PACKAGE-3

Manufacturer:

vishay
Mfr.Part #:

SSTJ212
Datasheet:

SSTJ212 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Configuration:

Single
EDA/CAD Models:

Request Free CAD Models for SSTJ212

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

SSTJ212 General Description

DESCRIPTIONThe J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage, typically under 2 pA, low noise, under 10 nano volts per square hertz at 10 hertz and high gain. This series is excellent for mixer, oscillators and amplifier applications.FEATURES• Low Noise• Low Leakage• High Power GainAPPLICATIONS• General Purpose Amplifiers• VHF/UHF Amplifiers• Mixers• Oscillators

Specifications

Product Category	JFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Configuration	Single	Vgs - Gate-Source Breakdown Voltage	- 25 V
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Forward Transconductance - Min	0.006 S	Operating Temperature Range	- 55 C to + 150 C
Product Type	JFETs	Factory Pack Quantity	1000
Subcategory	Transistors	Type	JFET
Unit Weight	0.000282 oz