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SQJ407EP-T1_GE3

Automotive P-Channel 30 V (D-S) 175 °C MOSFET

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SQJ407EP-T1_GE3 General Description

P-Channel 30 V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

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Key Features

  • TrenchFET® power MOSFET
  • AEC-Q101 qualified
  • 100 % Rg and UIS tested
    • VISHAY Original Stock
    VISHAY Inventory

    Specifications

    Product Category MOSFET Technology Si
    Mounting Style SMD/SMT Transistor Polarity P-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
    Id - Continuous Drain Current 60 A Rds On - Drain-Source Resistance 4.4 mOhms
    Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V
    Qg - Gate Charge 169 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 175 C Pd - Power Dissipation 68 W
    Channel Mode Enhancement Qualification AEC-Q101
    Tradename TrenchFET Series SQ
    Configuration Single Fall Time 14 ns
    Product Type MOSFET Rise Time 19 ns
    Factory Pack Quantity 3000 Subcategory MOSFETs
    Typical Turn-Off Delay Time 72 ns Typical Turn-On Delay Time 23 ns
    Unit Weight 0.017870 oz

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