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SQ2308CES-T1_GE3

MOSFET 60V 2.3A 2watt AEC-Q101 Qualified

SQ2308CES-T1_GE3 General Description

Small Signal Field-Effect Transistor, 2.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN

Key Features

  • TrenchFET® Power MOSFET
  • AEC-Q101 Qualified c
  • 100 % Rg and UIS Tested
  • Specifications

    Part Life Cycle Code Active Reach Compliance Code compliant
    ECCN Code EAR99 Factory Lead Time 26 Weeks, 4 Days
    Avalanche Energy Rating (Eas) 2.5 mJ Configuration SINGLE WITH BUILT-IN DIODE
    DS Breakdown Voltage-Min 60 V Drain Current-Max (ID) 2.3 A
    Drain-source On Resistance-Max 0.15 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
    Feedback Cap-Max (Crss) 18 pF JEDEC-95 Code TO-236AB
    JESD-30 Code R-PDSO-G3 Number of Elements 1
    Number of Terminals 3 Operating Mode ENHANCEMENT MODE
    Operating Temperature-Max 175 °C Operating Temperature-Min -55 °C
    Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
    Pulsed Drain Current-Max (IDM) 9 A Surface Mount YES
    Terminal Form GULL WING Terminal Position DUAL
    Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Element Material SILICON
    Turn-off Time-Max (toff) 35 ns Turn-on Time-Max (ton) 19 ns
    Series TrenchFET® FET Type N-Channel
    Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V
    Current - Continuous Drain (Id) @ 25°C 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
    Rds On (Max) @ Id, Vgs 150mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 5.3 nC @ 10 V Vgs (Max) ±20V
    Input Capacitance (Ciss) (Max) @ Vds 205 pF @ 30 V Power Dissipation (Max) 2W (Tc)
    Operating Temperature -55°C ~ 175°C (TJ) Grade Automotive
    Qualification AEC-Q101 Mounting Type Surface Mount
    Base Product Number SQ2308

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    Availability: 7451 PCS

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