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See Technical Specifications

SPD03N50C3

N-Channel 560 V 3.2A (Tc) 38W (Tc) Surface Mount PG-TO252-3-11

Manufacturer:

INFINEON
Mfr.Part #:

SPD03N50C3
Datasheet:

SPD03N50C3 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Not Recommended
Pin Count:

3
Reach Compliance Code:

not_compliant
EDA/CAD Models:

Request Free CAD Models for SPD03N50C3

Email: [email protected]

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Tel: +852 95804164

SPD03N50C3 General Description

Power Field-Effect Transistor, 3.2A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3

Key Features

Static drain-source on-resistance:
RDS(on)≤1.4Ω
Enhancement mode:
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation

Specifications

Source Content uid	SPD03N50C3	Pbfree Code	Yes
Part Life Cycle Code	Not Recommended	Pin Count	3
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Additional Feature	AVALANCHE RATED	Avalanche Energy Rating (Eas)	100 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	500 V	Drain Current-Max (ID)	3.2 A
Drain-source On Resistance-Max	1.4 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252AA	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	38 W	Pulsed Drain Current-Max (IDM)	9.6 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Element Material	SILICON
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	500 V
Id - Continuous Drain Current	3.2 A	Rds On - Drain-Source Resistance	1.4 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	38 W
Channel Mode	Enhancement	Tradename	CoolMOS
Series	CoolMOS C3	Fall Time	15 ns
Height	2.3 mm	Length	6.5 mm
Product Type	MOSFET	Rise Time	5 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	70 ns
Typical Turn-On Delay Time	10 ns	Width	6.22 mm
Part # Aliases	SP000307392 SPD3N5C3XT SPD03N50C3BTMA1	Unit Weight	0.011640 oz