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2SA1162-GR +BOM

TO-236MOD SC-59 3-Pin Package

Manufacturer:

Toshiba
Mfr.Part #:

2SA1162-GR
Datasheet:

2SA1162-GR Datasheet (PDF)
Series:

2SA1162
Factory Pack Quantity:

10000
Technology:

Si

Email: [email protected]

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Tel: +852 95804164

2SA1162-GR General Description

The 2SA1162-GR is a PNP epitaxial silicon transistor designed for use in high-current, high-speed switching applications. It has a maximum collector current of 2A and a collector-base voltage of 50V. The transistor features a low saturation voltage and fast switching speeds, making it ideal for applications requiring high efficiency and performance.The 2SA1162-GR is housed in a TO-126 package, which provides thermal stability and reliability. The transistor has a maximum power dissipation of 1.5W and a transition frequency of 150MHz, allowing for high-frequency operation.This transistor is commonly used in power supply circuits, motor control applications, and audio amplifier circuits. Its small size and high efficiency make it suitable for a wide range of electronic devices and systems.

Key Features

Low voltage high-current small signal NPN transistor
Complementary to 2SC2784-GR
Continuous collector current of 1.5A
Low saturation voltage
High DC current gain
High speed switching
TO-220F package

Application

Audio amplifiers
Power supply regulators
Switching circuits
Motor control systems
Lighting systems
Battery management systems
Signal amplification circuits
Temperature sensors
Solar energy systems
Instrumentation systems

Specifications

Product Category	Bipolar Transistors - BJT	Series	2SA1162
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	10000
Subcategory	Transistors	Technology	Si