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SIHG21N80AEF-GE3

E Series Power MOSFET

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SIHG21N80AEF-GE3 General Description

N-Channel 800 V 16.3A (Tc) 179W (Tc) Through Hole TO-247AC

Vishay Inventory

Key Features

  • Low figure-of-merit (FOM) Ron x Qg
  • Low effective capacitance (Co(er))
  • Reduced switching and conduction losses
  • Avalanche energy rated (UIS)
    • Vishay Original Stock

    Application

    • oServer and telecom power supplies
    • oSwitch mode power supplies (SMPS)
    • oPower factor correction power supplies (PFC)
    • oLighting
    • oHigh-intensity discharge (HID)
    • oFluorescent ballast lighting
    • oIndustrial
    • oWelding
    • oInduction heating
    • oMotor drives
    • oBattery chargers
    • oSolar (PV inverters)
    Vishay Inventory

    Specifications

    Product Category MOSFET Technology Si
    Mounting Style Through Hole Transistor Polarity N-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 800 V
    Id - Continuous Drain Current 16.3 A Rds On - Drain-Source Resistance 250 mOhms
    Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 4 V
    Qg - Gate Charge 71 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 150 C Pd - Power Dissipation 179 W
    Channel Mode Enhancement Tradename TrenchFET
    Configuration Single Fall Time 86 ns
    Product Type MOSFET Rise Time 56 ns
    Factory Pack Quantity 500 Subcategory MOSFETs
    Transistor Type 1 N-Channel Typical Turn-Off Delay Time 88 ns
    Typical Turn-On Delay Time 36 ns

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