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SIHF16N50C-E3 +BOM

N-Channel 500 V 16A (Tc) 38W (Tc) Through Hole TO-220 Full Pack

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SIHF16N50C-E3 General Description

N-Channel 500 V 16A (Tc) 38W (Tc) Through Hole TO-220 Full Pack

Vishay Inventory

Key Features

  • Low figure-of-merit Ron x Qg
  • 100 % avalanche tested
  • Gate charge improved
  • trr/Qrr improved
    • Vishay Original Stock
    Vishay Inventory

    Specifications

    Product Category MOSFET Technology Si
    Mounting Style Through Hole Transistor Polarity N-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 650 V
    Id - Continuous Drain Current 15 A Rds On - Drain-Source Resistance 280 mOhms
    Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 4 V
    Qg - Gate Charge 48 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 150 C Pd - Power Dissipation 34 W
    Channel Mode Enhancement Configuration Single
    Fall Time 25 ns Height 15.49 mm
    Length 10.41 mm Product Type MOSFET
    Rise Time 24 ns Factory Pack Quantity 1000
    Subcategory MOSFETs Typical Turn-Off Delay Time 48 ns
    Typical Turn-On Delay Time 18 ns Width 4.7 mm
    Unit Weight 0.068784 oz

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    In Stock: 7,072

    Minimum Order: 1

    Qty. Unit Price Ext. Price
    1+ $8.156 $8.16
    200+ $3.255 $651.00
    500+ $3.147 $1,573.50
    1000+ $3.093 $3,093.00

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