This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

SI7884BDP-T1-GE3 +BOM

Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R / MOSFET N-CH 40V 58A PPAK SO-8

Manufacturer:

VISHAY
Mfr.Part #:

SI7884BDP-T1-GE3
Datasheet:

SI7884BDP-T1-GE3 Datasheet (PDF)
Part Life Cycle Code:

Not Recommended
Reach Compliance Code:

compliant
Application:

SWITCHING
Case Connection:

DRAIN
EDA/CAD Models:

Request Free CAD Models for SI7884BDP-T1-GE3

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

SI7884BDP-T1-GE3 General Description

Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:58000mA; Drain Source Voltage, Vds:40V; On Resistance, Rds(on):0.009ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:4.6W ;RoHS Compliant: Yes

Specifications

Part Life Cycle Code	Not Recommended	Reach Compliance Code	compliant
Application	SWITCHING	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-N8	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	8
Operating Mode	ENHANCEMENT MODE	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	NO LEAD
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Element Material	SILICON