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SI7252DP-T1-GE3

N-Channel Silicon Metal-oxide Semiconductor FET

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SI7252DP-T1-GE3 General Description

Mosfet Array 100V 36.7A 46W Surface Mount PowerPAK® SO-8 Dual

Key Features

  • TrenchFET® power MOSFET,100 % Rg and UIS tested

Specifications

Product Category MOSFET REACH Details
Technology Si Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 36.7 A
Rds On - Drain-Source Resistance 14 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.5 V Qg - Gate Charge 27 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 46 W Channel Mode Enhancement
Tradename TrenchFET Series SI7
Configuration Dual Fall Time 7 ns
Forward Transconductance - Min 40 S Product Type MOSFET
Rise Time 13 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 18 ns Typical Turn-On Delay Time 12 ns
Unit Weight 0.017870 oz

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