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SI7157DP-T1-GE3
Power MOSFET capable of handling -20V drain-source voltage and 12V gate-source voltage
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Manufacturer:
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Mfr.Part #:
SI7157DP-T1-GE3
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Datasheet:
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REACH:
Details
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
P-Channel
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EDA/CAD Models:
Availability: 5331 PCS
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SI7157DP-T1-GE3 General Description
Power Field-Effect Transistor, 60A I(D), 20V, 0.0016ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERPAK, SOP-8
Key Features
Specifications
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | SMD/SMT |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 20 V | Id - Continuous Drain Current | 60 A |
Rds On - Drain-Source Resistance | 2 mOhms | Vgs - Gate-Source Voltage | - 12 V, + 12 V |
Vgs th - Gate-Source Threshold Voltage | 1.4 V | Qg - Gate Charge | 415 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 104 W | Channel Mode | Enhancement |
Tradename | TrenchFET | Series | SI7 |
Configuration | Single | Fall Time | 75 ns |
Forward Transconductance - Min | 120 S | Product Type | MOSFET |
Rise Time | 120 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 230 ns | Typical Turn-On Delay Time | 115 ns |
Unit Weight | 0.017870 oz |
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Availability: 5331 PCS
+BOMQty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.826 | $0.83 |
200+ | $0.320 | $64.00 |
500+ | $0.309 | $154.50 |
1000+ | $0.304 | $304.00 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for SI7157DP-T1-GE3, guaranteed quotes back within 12hr.
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