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See Technical Specifications

SI7149DP-T1-GE3 +BOM

Single P-Channel 30 V 5.2 mOhms Surface Mount Power Mosfet - PowerPAK-SO-8

Manufacturer:

VISHAY
Mfr.Part #:

SI7149DP-T1-GE3
Datasheet:

SI7149DP-T1-GE3 Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

30 V
Current - Continuous Drain (Id) @ 25°C:

50A (Tc)
EDA/CAD Models:

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SI7149DP-T1-GE3 General Description

MOSFET, P CH, 30V, 50A, PPAK SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-50A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-50A; Power Dissipation Pd:69W; Voltage Vgs Max:25V

Key Features

Halogen-free |TrenchFET® Power MOSFET |100% R Tested |100% UIS Tested

Application

Battery and Load Switching - Notebook Computers - Notebook Battery Packs

Specifications

FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	5.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	147 nC @ 10 V
Vgs (Max)	±25V	Input Capacitance (Ciss) (Max) @ Vds	4590 pF @ 15 V
FET Feature	-	Power Dissipation (Max)	69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount