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SI7149ADP-T1-GE3

Trans MOSFET P-CH 30V 50A 8-Pin PowerPAK SO EP T/R

Manufacturer:

VISHAY
Mfr.Part #:

SI7149ADP-T1-GE3
Datasheet:

SI7149ADP-T1-GE3 Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

30 V
Current - Continuous Drain (Id) @ 25°C:

50A (Tc)
EDA/CAD Models:

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SI7149ADP-T1-GE3 General Description

MOSFET, P-CH, -30V, -50A, POWERPAK SO; Transistor Polarity: P Channel; Continuous Drain Current Id: -50A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0042ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.5V; Power Dissipation Pd: 48W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

Key Features

None

Application

SWITCHING

Specifications

FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	5.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	135 nC @ 10 V
Vgs (Max)	±25V	Input Capacitance (Ciss) (Max) @ Vds	5125 pF @ 15 V
FET Feature	-	Power Dissipation (Max)	5W (Ta), 48W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Product Category	MOSFET	Mounting Style	SMD/SMT
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	50 A
Rds On - Drain-Source Resistance	4.2 mOhms	Vgs - Gate-Source Voltage	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage	2.5 V	Qg - Gate Charge	135 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	48 W	Channel Mode	Enhancement
Tradename	TrenchFET	Series	SI7
Configuration	Single	Fall Time	12 ns
Forward Transconductance - Min	60 S	Product Type	MOSFET
Rise Time	12 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	58 ns	Typical Turn-On Delay Time	15 ns
Unit Weight	0.017870 oz