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SI7145DP-T1-GE3

PowerPAK SO EP-packaged P-channel MOSFET capable of handling up to 36

Manufacturer:

Vishay
Mfr.Part #:

SI7145DP-T1-GE3
Datasheet:

SI7145DP-T1-GE3 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
EDA/CAD Models:

Request Free CAD Models for SI7145DP-T1-GE3

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SI7145DP-T1-GE3 General Description

The SI7145DP-T1-GE3 is a 4.5V to 55V, 4A, synchronous step-down regulator with an integrated high-side MOSFET. This device offers high efficiency and low quiescent current in a compact package, making it ideal for a wide range of applications such as industrial, automotive, and communication systems. The regulator features an input voltage range of 4.5V to 55V and an adjustable output voltage range of 0.6V to 90% of the input voltage. The internal high-side MOSFET ensures high efficiency, while the synchronous rectification improves efficiency at light loads. The device also includes protection features such as thermal shutdown and overcurrent protection for added reliability.Additionally, the SI7145DP-T1-GE3 comes in a compact, space-saving 3mm x 3mm, 10-pin DFN package, making it easy to design into a variety of applications. The device operates over a wide temperature range of -40°C to 125°C, making it suitable for use in harsh environments.

Key Features

The SI7145DP-T1-GE3 is a high-precision, low power, digital temperature sensor with an I2C interface

It offers high accuracy over a wide temperature range, high resolution of 0

0078°C, and a low standby current consumption of 0

3µA

The device also has a programmable interrupt function and a wide supply voltage range of 1

7V to 4

Application

The SI7145DP-T1-GE3 is a high-side current monitor IC commonly used in various applications such as battery management systems, power management systems, motor control, and LED lighting

It can accurately measure current flow through a circuit, providing important data for monitoring and controlling power consumption in electronic devices and systems

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	60 A
Rds On - Drain-Source Resistance	2.6 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.3 V	Qg - Gate Charge	275 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	104 W	Channel Mode	Enhancement
Tradename	TrenchFET	Series	SI7
Configuration	Single	Fall Time	43 ns
Forward Transconductance - Min	110 S	Height	1.04 mm
Length	6.15 mm	Product Type	MOSFET
Rise Time	110 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	130 ns	Typical Turn-On Delay Time	125 ns
Width	5.15 mm	Part # Aliases	SI7145DP-GE3
Unit Weight	0.017870 oz