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SI7141DP-T1-GE3

20V 60A PowerPAK SO-8 Vishay MOSFET SI7141DP-T1-GE3

Manufacturer:

Vishay
Mfr.Part #:

SI7141DP-T1-GE3
Datasheet:

SI7141DP-T1-GE3 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
EDA/CAD Models:

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SI7141DP-T1-GE3 General Description

Mosfet, P Channel, -20V, -60A, Powerpak So-8, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:104W Rohs Compliant: Yes |Vishay SI7141DP-T1-GE3.

Key Features

TrenchFET® power MOSFET

100 % Rg and UIS tested

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	20 V	Id - Continuous Drain Current	60 A
Rds On - Drain-Source Resistance	1.9 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.3 V	Qg - Gate Charge	265 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	104 W	Channel Mode	Enhancement
Tradename	TrenchFET	Series	SI7
Configuration	Single	Fall Time	38 ns
Forward Transconductance - Min	103 S	Product Type	MOSFET
Rise Time	16 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	130 ns	Typical Turn-On Delay Time	130 ns
Part # Aliases	SI7141DP-GE3	Unit Weight	0.017870 oz