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See Technical Specifications

SI7139DP-T1-GE3

Trans MOSFET P-CH 30V 22.4A 8-Pin PowerPAK SO T/R

Manufacturer:

VISHAY
Mfr.Part #:

SI7139DP-T1-GE3
Datasheet:

SI7139DP-T1-GE3 Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

30 V
Current - Continuous Drain (Id) @ 25°C:

40A (Tc)
EDA/CAD Models:

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SI7139DP-T1-GE3 General Description

MOSFET, P CH, -30V, -40A, POWERPAK SO; Transistor Polarity:P Channel; Continuous Drain Current Id:-40A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0074ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:48W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-

Key Features

None

Application

SWITCHING

Specifications

FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	146 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	4230 pF @ 15 V
FET Feature	-	Power Dissipation (Max)	5W (Ta), 48W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount