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See Technical Specifications

SI7137DP-T1-GE3

This is a Si-based Power MOSFET designed as a P-Channel device

Manufacturer:

Vishay
Mfr.Part #:

SI7137DP-T1-GE3
Datasheet:

SI7137DP-T1-GE3 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
EDA/CAD Models:

Request Free CAD Models for SI7137DP-T1-GE3

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SI7137DP-T1-GE3 General Description

MOSFET, P CH, -20V, -60A, POWERPAK SO; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-

Key Features

TrenchFET® Gen III p-channel power MOSFET

100 % Rg and UIS tested

Application

SWITCHING

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	20 V	Id - Continuous Drain Current	60 A
Rds On - Drain-Source Resistance	1.95 mOhms	Vgs - Gate-Source Voltage	- 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage	1.4 V	Qg - Gate Charge	390 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	104 W	Channel Mode	Enhancement
Tradename	TrenchFET	Series	SI7
Configuration	Single	Fall Time	110 ns
Forward Transconductance - Min	95 S	Product Type	MOSFET
Rise Time	150 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	230 ns	Typical Turn-On Delay Time	100 ns
Part # Aliases	SI7137DP-GE3	Unit Weight	0.017870 oz