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See Technical Specifications

SI7129DN-T1-GE3

Trans MOSFET P-CH 30V 14.4A 8-Pin PowerPAK 1212 EP T/R

Manufacturer:

VISHAY
Mfr.Part #:

SI7129DN-T1-GE3
Datasheet:

SI7129DN-T1-GE3 Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

30 V
Current - Continuous Drain (Id) @ 25°C:

35A (Tc)
EDA/CAD Models:

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SI7129DN-T1-GE3 General Description

Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V; Power Dissipation:52.1W; No. Of Pins:8Pins Rohs Compliant: Yes |Vishay SI7129DN-T1-GE3.

Key Features

TrenchFET® power MOSFET

Low thermal resistance PowerPAK® package with small size and low 1.07 mm profile

100 % Rg and UIS tested

Application

SWITCHING

Specifications

FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	11.4mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	71 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	3345 pF @ 15 V
FET Feature	-	Power Dissipation (Max)	3.8W (Ta), 52.1W (Tc)
Operating Temperature	-50°C ~ 150°C (TJ)	Mounting Type	Surface Mount