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SI7113ADN-T1-GE3 +BOM

Power Field-Effect Transistor, 10.8A I(D), 100V, 0.132ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer:

VISHAY
Mfr.Part #:

SI7113ADN-T1-GE3
Datasheet:

SI7113ADN-T1-GE3 Datasheet (PDF)
Part Life Cycle Code:

Active
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

11.25 mJ
Case Connection:

DRAIN
EDA/CAD Models:

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SI7113ADN-T1-GE3 General Description

Mosfet, P-Ch, -100V, -10.8A, 150Deg C; Transistor Polarity:P Channel; Continuous Drain Current Id:-10.8A; Drain Source Voltage Vds:-100V; On Resistance Rds(On):0.11Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.6V; Rohs Compliant: Yes |Vishay SI7113ADN-T1-GE3

Key Features

TrenchFET® power MOSFET

100 % Rg and UIS tested

Specifications

Part Life Cycle Code	Active	Reach Compliance Code
ECCN Code	EAR99	Avalanche Energy Rating (Eas)	11.25 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100 V	Drain Current-Max (ID)	10.8 A
Drain-source On Resistance-Max	0.132 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	S-PDSO-F5	Number of Elements	1
Number of Terminals	5	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	P-CHANNEL
Pulsed Drain Current-Max (IDM)	20 A	Surface Mount	YES
Terminal Form	FLAT	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON