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SI4946BEY-T1-GE3 +BOM

Dual N-Channel MOSFET Array Transistor with 60V Voltage Limit and 6

Manufacturer:

Vishay
Mfr.Part #:

SI4946BEY-T1-GE3
Datasheet:

SI4946BEY-T1-GE3 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for SI4946BEY-T1-GE3

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SI4946BEY-T1-GE3 General Description

MOSFET, DUAL N-CH, 60V, 6.5A, SOIC; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.4V; Power Dissipation Pd: 3.7W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

Key Features

Designed for advanced, high-speed, power management applications.
Low on-resistance and low gate charge.
High performance due to reduced conduction and switching losses.
RoHS compliant.

Application

Power management in various electronic devices.
DC-DC converters.
Battery chargers.
Motor control circuits.
LED lighting applications.

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	6.5 A
Rds On - Drain-Source Resistance	41 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1 V	Qg - Gate Charge	17 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	3.7 W	Channel Mode	Enhancement
Tradename	TrenchFET	Series	SI4
Configuration	Dual	Fall Time	10 ns
Forward Transconductance - Min	24 S	Product Type	MOSFET
Rise Time	12 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	25 ns	Typical Turn-On Delay Time	10 ns
Part # Aliases	SI4946BEY-GE3	Unit Weight	0.026455 oz