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SI4850EY-T1-E3 +BOM

Transistor metal-oxide-semiconductor field-effect transistor N-channel 60V 6A 8-pin small outline integrated circuit package N tape and reel

Manufacturer:

Vishay
Mfr.Part #:

SI4850EY-T1-E3
Datasheet:

SI4850EY-T1-E3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI4850EY-T1-E3

Email: [email protected]

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Tel: +852 95804164

SI4850EY-T1-E3 General Description

The SI4850EY-T1-E3 is a high-quality N Channel Mosfet designed to offer exceptional performance in a variety of applications. With a drain source voltage of 60V and a continuous drain current of 8.5A, this transistor is capable of handling demanding tasks with ease. Its surface mount design makes it easy to integrate into existing electronic systems, while its 3.3W power dissipation ensures reliable operation even under heavy loads. Additionally, the SI4850EY-T1-E3 is RoHS compliant, making it an environmentally friendly choice for your projects

Key Features

None

Application

SWITCHING

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	8.5 A	Rds On - Drain-Source Resistance	22 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	27 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	3.3 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI4	Configuration	Single
Fall Time	12 ns	Forward Transconductance - Min	25 S
Height	1.75 mm	Length	4.9 mm
Product Type	MOSFET	Rise Time	10 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	25 ns
Typical Turn-On Delay Time	10 ns	Width	3.9 mm
Part # Aliases	SI4850EY-E3	Unit Weight	0.002610 oz