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SI3932DV-T1-GE3

Transistor MOSFET Array Dual N-CH 30V 3.7A 6-Pin TSOP T/R

Manufacturer:

VISHAY
Mfr.Part #:

SI3932DV-T1-GE3
Datasheet:

SI3932DV-T1-GE3 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for SI3932DV-T1-GE3

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SI3932DV-T1-GE3 General Description

MOSFET, DUAL N-CH, 30V, 3.7A, TSOP; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3.7A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V; Power Dissipation Pd: 1.4W; Transistor Case Style: TSOP; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

Key Features

TrenchFET® power MOSFET

100% Rg tested

Application

Load switch for portable applications DC/DC converters

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	3.7 A
Rds On - Drain-Source Resistance	58 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.2 V	Qg - Gate Charge	6 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1.4 W	Channel Mode	Enhancement
Tradename	TrenchFET	Series	SI3
Configuration	Dual	Fall Time	10 ns
Forward Transconductance - Min	10 S	Product Type	MOSFET
Rise Time	15 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	10 ns	Typical Turn-On Delay Time	10 ns
Part # Aliases	SI3932DV-GE3	Unit Weight	0.000705 oz