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SI3590DV-T1-GE3

MOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR

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SI3590DV-T1-GE3 General Description

Mosfet Array 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP

Key Features

  • TrenchFET® power MOSFET
  • Ultra low RDS(on) n- and p-channel for high efficiency
  • Optimized for high side / low side
  • Minimized conduction losses

    • Application

    SWITCHING

    Specifications

    Technology MOSFET (Metal Oxide) Configuration N and P-Channel
    FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V
    Current - Continuous Drain (Id) @ 25°C 2.5A, 1.7A Rds On (Max) @ Id, Vgs 77mOhm @ 3A, 4.5V
    Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds - Power - Max 830mW
    Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount

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