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SI3483CDV-T1-GE3

P-CH MOSFET TSOP-6 30V 34MOHM @ 10V- LEAD(PB) AND HALOGEN FREE

Manufacturer:

VISHAY
Mfr.Part #:

SI3483CDV-T1-GE3
Datasheet:

SI3483CDV-T1-GE3 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Not Recommended
Pin Count:

6
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for SI3483CDV-T1-GE3

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SI3483CDV-T1-GE3 General Description

P Channel Mosfet, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; No. Of Pins:6Pins Rohs Compliant: No |Vishay SI3483CDV-T1-GE3.

Key Features

TrenchFET® power MOSFET

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Not Recommended
Pin Count	6	Reach Compliance Code
ECCN Code	EAR99	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	6.1 A
Drain-source On Resistance-Max	0.034 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	140 pF	JEDEC-95 Code	MO-193AA
JESD-30 Code	R-PDSO-G6	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	6
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL	Power Dissipation-Max (Abs)	4.2 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Pure Matte Tin (Sn)	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	8 A	Rds On - Drain-Source Resistance	34 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	33 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	4.2 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI3	Fall Time	15 ns
Product Type	MOSFET	Rise Time	135 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Typical Turn-Off Delay Time	30 ns
Typical Turn-On Delay Time	45 ns	Part # Aliases	SI3483CDV-T1-BE3 SI3483CDV-GE3
Unit Weight	0.000705 oz