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SI2337DS-T1-E3

P-channel MOSFET

Manufacturer:

Vishay
Mfr.Part #:

SI2337DS-T1-E3
Datasheet:

SI2337DS-T1-E3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

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SI2337DS-T1-E3 General Description

MOSFET, P CH, 80V, 2.2A, TO-236; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-80V; On Resistance Rds(on):0.216ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:760mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-236; No. of Pins:3; Operating Temperature Range:-55°C to +150°C

Key Features

TrenchFET® power MOSFET

Application

SWITCHING

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	80 V
Id - Continuous Drain Current	2.2 A	Rds On - Drain-Source Resistance	270 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	17 nC	Minimum Operating Temperature	- 50 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.5 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	12 ns	Forward Transconductance - Min	4.3 S
Height	1.45 mm	Length	2.9 mm
Product Type	MOSFET	Rise Time	15 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Typical Turn-Off Delay Time	20 ns
Typical Turn-On Delay Time	10 ns	Width	1.6 mm
Part # Aliases	SI2337DS-T1-BE3 SI2337DS-E3	Unit Weight	0.000282 oz