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SI2325DS-T1-E3

P-Channel 150 V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

email Email: [email protected]
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SI2325DS-T1-E3 General Description

P-Channel 150 V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Key Features

  • None

    • Application

    • Industrial
    • Power Management

    Specifications

    Part Life Cycle Code Active Reach Compliance Code compliant
    Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 150 V
    Drain Current-Max (ID) 0.53 A Drain-source On Resistance-Max 1.3 Ω
    FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 16 pF
    JEDEC-95 Code TO-236AB JESD-30 Code R-PDSO-G3
    JESD-609 Code e3 Moisture Sensitivity Level 1
    Number of Elements 1 Number of Terminals 3
    Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
    Operating Temperature-Min -55 °C Peak Reflow Temperature (Cel) 260
    Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 0.75 W
    Qualification Status Not Qualified Surface Mount YES
    Terminal Finish MATTE TIN Terminal Form GULL WING
    Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
    Transistor Element Material SILICON

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    AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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