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SI2319DS-T1-GE3

MOSFET with a voltage rating of 40V, current capacity of 3.0A, power dissipation of 1.25W, and a low on-resistance of 82mohm at 10V

Manufacturer:

Vishay
Mfr.Part #:

SI2319DS-T1-GE3
Datasheet:

SI2319DS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2319DS-T1-GE3

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SI2319DS-T1-GE3 General Description

P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.3A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:750mW

Key Features

None

Application

SWITCHING

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	2.3 A	Rds On - Drain-Source Resistance	82 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	11.3 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	750 mW
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	25 ns	Height	1.45 mm
Length	2.9 mm	Product Type	MOSFET
Rise Time	15 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	25 ns	Typical Turn-On Delay Time	7 ns
Width	1.6 mm	Part # Aliases	SI2319DS-T1-BE3 SI2319DS-GE3
Unit Weight	0.000282 oz