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SI2309CDS-T1-GE3

ROHS-certified SOT-23 MOSFETs

Manufacturer:

Vishay
Mfr.Part #:

SI2309CDS-T1-GE3
Datasheet:

SI2309CDS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2309CDS-T1-GE3

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SI2309CDS-T1-GE3 General Description

The SI2309CDS-T1-GE3 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay Siliconix. It belongs to the Vishay's TrenchFET® power MOSFET series, known for their high performance and reliability in power management applications.Key specifications of the SI2309CDS-T1-GE3 include a drain-source voltage (VDS) of 20 volts, a continuous drain current (ID) of 4.3 amperes, and a low on-resistance (RDS(ON)) of 37 milliohms at a gate-source voltage (VGS) of 4.5 volts. It features a compact SOT-23 package, suitable for space-constrained designs.This MOSFET is optimized for use in various power switching applications such as load and power management, battery protection circuits, DC-DC converters, and motor control. Its low on-resistance minimizes power losses and improves efficiency in these applications, while its high drain-source voltage rating ensures robustness and reliability.Furthermore, the SI2309CDS-T1-GE3 offers fast switching speeds and low gate charge, enabling efficient operation and reducing switching losses. Its high current-handling capability makes it suitable for a wide range of low to moderate power applications across various industries including consumer electronics, automotive, industrial automation, and telecommunications

Key Features

The SI2309CDS-T1-GE3 is a small-signal N-channel MOSFET with a low on-resistance of 180mΩ, making it ideal for use in power management applications

It has a maximum drain-source voltage of 20V and a continuous drain current of 1

This MOSFET also features high speed switching characteristics and low gate charge

Application

The SI2309CDS-T1-GE3 is commonly used as a power MOSFET in various applications such as battery management systems, power supplies, motor control, and DC-DC converters

Its low on-state resistance and high efficiency make it suitable for these applications where efficient power management and control are essential

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	1.6 A	Rds On - Drain-Source Resistance	345 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	2.7 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.7 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	10 ns	Height	1.45 mm
Length	2.9 mm	Product Type	MOSFET
Rise Time	10 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	15 ns	Typical Turn-On Delay Time	5 ns
Width	1.6 mm	Part # Aliases	SI2309CDS-T1-BE3 SI2309CDS-GE3
Unit Weight	0.000282 oz