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SI2307CDS-T1-GE3

SOT-23 package MOSFET with -30V Vds and 20V Vgs

Manufacturer:

Vishay
Mfr.Part #:

SI2307CDS-T1-GE3
Datasheet:

SI2307CDS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

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SI2307CDS-T1-GE3 General Description

P CHANNEL MOSFET, -30V, 2.7A TO-236, FUL; P CHANNEL MOSFET, -30V, 2.7A TO-236, FULL REEL; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.7A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.138ohm; Rds(on) Test Voltage Vgs: 20V; Threshold Voltage Vgs: -3V

Key Features

TrenchFET® power MOSFET

Application

SWITCHING

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	3.5 A	Rds On - Drain-Source Resistance	88 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	4.1 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.8 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	7.7 ns	Height	1.45 mm
Length	2.9 mm	Product Type	MOSFET
Rise Time	13 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	17 ns	Typical Turn-On Delay Time	5.5 ns
Width	1.6 mm	Part # Aliases	SI2307CDS-T1-BE3 SI2307CDS-GE3
Unit Weight	0.000282 oz