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SI2302CDS-T1-GE3

N-channel 20V MOSFET with a 2.6A current rating in a SOT-23 package, part number SI2302CDS-T1-GE3

Manufacturer:

Vishay
Mfr.Part #:

SI2302CDS-T1-GE3
Datasheet:

SI2302CDS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2302CDS-T1-GE3

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SI2302CDS-T1-GE3 General Description

Mosfet, N Channel, 20V, 0.045Ohm, 2.6A, To-236, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.9A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:2.5V; Power Dissipation:710Mw Rohs Compliant: No |Vishay SI2302CDS-T1-GE3.

Key Features

TrenchFET® power MOSFET

Application

Load Switching for Portable Devices |DC/DC Converter

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	2.9 A	Rds On - Drain-Source Resistance	57 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	850 mV
Qg - Gate Charge	3.5 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	860 mW
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	7 ns	Height	1.45 mm
Length	2.9 mm	Product Type	MOSFET
Rise Time	7 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	30 ns	Typical Turn-On Delay Time	8 ns
Width	1.6 mm	Part # Aliases	SI2302CDS-T1-BE3 SI2302CDS-GE3
Unit Weight	0.000282 oz