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SI2302ADS-T1-E3 +BOM

Small Signal Field-Effect Transistor, 2.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, ROHS COMPLIANT PACKAGE-3

Manufacturer:

VISHAY
Mfr.Part #:

SI2302ADS-T1-E3
Datasheet:

SI2302ADS-T1-E3 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

20 V
Current - Continuous Drain (Id) @ 25°C:

2.1A (Ta)
EDA/CAD Models:

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SI2302ADS-T1-E3 General Description

The SI2302ADS-T1-E3 MOSFET is a standout choice for those seeking superior performance in high-speed switching applications. With a negligible on-state resistance of only 95 milliohms at a gate voltage of 4.5 volts, this MOSFET delivers exceptional power management and reduced power losses. Its compact SOT-23 package makes it an ideal solution for space-constrained applications, ensuring optimal performance in portable electronics, power supplies, and battery management systems. Featuring a maximum drain-source voltage of 20 volts and a continuous drain current rating of 2.7 amperes, the SI2302ADS-T1-E3 offers reliable operation for applications requiring moderate power levels

Key Features

1. It is a P-channel MOSFET with a maximum threshold voltage of -1.8V.
2. It has a maximum drain-source voltage (Vds) of -20V and a continuous drain current (Id) of -2.5A.
3. It has a low on-resistance (Rds(on)) of approximately 70mΩ.
4. It has a small form factor, with SOT-23 package type.

Application

1. Switching circuits: SI2302ADS-T1-E3 can be used as a power switch in various electronic circuits, controlling current flow to other components.
2. Basic amplification: It can be utilized in signal amplification applications with low power requirements.
3. Battery-driven applications: Due to its low on-resistance and small package size, it is suitable for battery-powered devices like smartphones, tablets, and portable electronics.

Specifications

Series	-	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	2.1A (Ta)	Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	60mOhm @ 3.6A, 4.5V	Vgs(th) (Max) @ Id	1.2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 4.5 V	Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	300 pF @ 10 V	FET Feature	-
Power Dissipation (Max)	700mW (Ta)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	SI2302