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SI1563DH-T1-E3 +BOM

Mosfet Array 20V 1.13A, 880mA 570mW Surface Mount SC-70-6

Manufacturer:

VISHAY
Mfr.Part #:

SI1563DH-T1-E3
Datasheet:

SI1563DH-T1-E3 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

6
ECCN Code:

EAR99

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

SI1563DH-T1-E3 General Description

MOSFET, DUAL, NP, 6-SC-70; Transistor Polarity:N and P Channel; Continuous Drain Current Id:1.28A; Drain Source Voltage Vds:20V; On Resistance Rds(on):280mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:740mW; Transistor Case Style:SC-70; No. of Pins:6; Current Id Max:1.13A; Package / Case:SC-70; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

Key Features

Trench MOS Schottky technology
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC and ITO-220AC package)
Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Application

SWITCHING

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Pin Count	6	Reach Compliance Code
ECCN Code	EAR99	Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	20 V	Drain Current-Max (ID)	1.13 A
Drain-source On Resistance-Max	0.28 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G6	Moisture Sensitivity Level	1
Number of Elements	2	Number of Terminals	6
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL	Power Dissipation-Max (Abs)	0.74 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	PURE MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Transistor Application	SWITCHING
Transistor Element Material	SILICON