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SI1553CDL-T1-GE3

SI1553CDL-T1-GE3 Dual N/P-channel MOSFET Transistor, 0.4A, 0.7A, 20V, 6-Pin SOT-363

Manufacturer:

VISHAY
Mfr.Part #:

SI1553CDL-T1-GE3
Datasheet:

SI1553CDL-T1-GE3 Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

N and P-Channel
FET Feature:

Logic Level Gate
Drain to Source Voltage (Vdss):

20V

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

SI1553CDL-T1-GE3 General Description

Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:700Ma; On Resistance Rds(On):0.325Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:6Pins Rohs Compliant: No

Key Features

TrenchFET® power MOSFET

100 % Rg tested

Application

["Load Switch ", "DC/DC Converter"]

Specifications

Technology	MOSFET (Metal Oxide)	Configuration	N and P-Channel
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	700mA, 500mA	Rds On (Max) @ Id, Vgs	390mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	1.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	38pF @ 10V	Power - Max	340mW
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount