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See Technical Specifications

SI1539CDL-T1-GE3

Voltage: 30 Volts, Current: 0.7 Amps, Power: 0.34 Watts

Manufacturer:

Vishay
Mfr.Part #:

SI1539CDL-T1-GE3
Datasheet:

SI1539CDL-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel, P-Channel
Number of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for SI1539CDL-T1-GE3

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SI1539CDL-T1-GE3 General Description

MOSFET, NP CH, 30V, W DIODE, SOT363; Transistor Polarity:N and P Channel; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:340mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-363; No. of Pins:6; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):0.323ohm; Power Dissipation Pd:340mW

Key Features

TrenchFET® power MOSFET

100 % Rg tested

Application

SWITCHING

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel, P-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	700 mA	Rds On - Drain-Source Resistance	388 mOhms, 890 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	3 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	340 mW
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI1	Configuration	Dual
Fall Time	15 ns	Product Type	MOSFET
Rise Time	25 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time	12 ns	Typical Turn-On Delay Time	26 ns
Part # Aliases	SI1539CDL-T1-BE3 SI1539CDL-GE3	Unit Weight	0.000265 oz