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SI1317DL-T1-GE3 +BOM

P-Channel 20 V (D-S) MOSFET

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SI1317DL-T1-GE3 General Description

P-Channel 20 V 1.4A (Tc) 500mW (Tc) Surface Mount SC-70-3

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Key Features

  • TrenchFET® power MOSFET
  • 100 % Rg tested
    • Vishay Original Stock
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    Specifications

    Product Category MOSFET Technology Si
    Mounting Style SMD/SMT Transistor Polarity P-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
    Id - Continuous Drain Current 1.4 A Rds On - Drain-Source Resistance 150 mOhms
    Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 800 mV
    Qg - Gate Charge 4.3 nC Minimum Operating Temperature - 50 C
    Maximum Operating Temperature + 150 C Pd - Power Dissipation 280 mW
    Channel Mode Enhancement Tradename TrenchFET
    Series SI1 Configuration Single
    Fall Time 7 ns Product Type MOSFET
    Rise Time 20 ns Factory Pack Quantity 3000
    Subcategory MOSFETs Transistor Type 1 P-Channel
    Typical Turn-Off Delay Time 23 ns Typical Turn-On Delay Time 12 ns
    Part # Aliases SI1317DL-T1-BE3 SI1307EDL-T1-GE3 Unit Weight 0.000212 oz

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    In Stock: 7,072

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    Qty. Unit Price Ext. Price
    1+ $0.104 $0.10
    10+ $0.084 $0.84
    30+ $0.076 $2.28
    100+ $0.068 $6.80
    500+ $0.063 $31.50
    1000+ $0.060 $60.00

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