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SI1302DL-T1-E3

Single N-Channel 30 V 0.48 Ohms Surface Mount Power Mosfet - SC-70-3

Manufacturer:

VISHAY
Mfr.Part #:

SI1302DL-T1-E3
Datasheet:

SI1302DL-T1-E3 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
Configuration:

SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:

30 V
EDA/CAD Models:

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SI1302DL-T1-E3 General Description

MOSFET, N, 3-SC-70; Transistor Polarity:N Channel; Continuous Drain Current Id:640mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):480mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:310mW; Transistor Case Style:SC-70; No. of Pins:3; Current Id Max:640mA; Package / Case:SC-70; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

Key Features

Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET
Compliant to RoHS Directive 2002/95/EC

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	0.6 A	Drain-source On Resistance-Max	0.48 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-G3
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	0.28 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Element Material	SILICON