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SCT30N120 +BOM

Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package

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SCT30N120 General Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Key Features

  • Very tight variation of on-resistance vs. temperature
  • Very high operating temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance

Specifications

ECCN US EAR99 ECCN EU NEC
Packing Type Tube Grade Industrial

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