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SCT30N120 +BOM
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
HIP247-
Manufacturer:
-
Mfr.Part #:
SCT30N120
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Datasheet:
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ECCN US:
EAR99
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ECCN EU:
NEC
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Packing Type:
Tube
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Grade:
Industrial
Availability: 4258 PCS
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SCT30N120 General Description
The SCT30N120 silicon carbide Power MOSFET redefines power management with its breakthrough technology and innovative design. Leveraging the unique characteristics of wide bandgap materials, this device offers unmatched on-resistance per unit area and exceptional switching performance that remains stable even in extreme temperature variations. The use of silicon carbide guarantees superior thermal properties, while the HiP247™ package enhances thermal dissipation, allowing for industry-leading thermal capability in a standard package footprint. Ideal for high-efficiency and high power density applications, the SCT30N120 empowers designers to achieve optimal performance and reliability in their power electronics systems
Key Features
- Very tight variation of on-resistance vs. temperature
- Very high operating temperature capability (TJ = 200 °C)
- Very fast and robust intrinsic body diode
- Low capacitance
Specifications
ECCN US | EAR99 | ECCN EU | NEC |
Packing Type | Tube | Grade | Industrial |
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In Stock: 4,258
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
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