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RGTV80TK65DGVC11 +BOM

IGBT Trench Field Stop 650 V 39 A 85 W Through Hole TO-3PFM

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IGBT Transistors 2us Short-Circuit Tolerance, 650V 23A, Built in FRD, TO-3PFM, Field Stop Trench IGBT

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	-
IGBT Type	Trench Field Stop	Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	39 A	Current - Collector Pulsed (Icm)	160 A
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 40A	Power - Max	85 W
Switching Energy	1.02mJ (on), 710µJ (off)	Input Type	Standard
Gate Charge	81 nC	Td (on/off) @ 25°C	39ns/113ns
Test Condition	400V, 40A, 10Ohm, 15V	Reverse Recovery Time (trr)	101 ns
Operating Temperature	-40°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	RGTV80	Product Category:	IGBT Transistors
Technology:	Si	Mounting Style:	Through Hole
Configuration:	Single	Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.5 V	Maximum Gate Emitter Voltage:	- 30 V, 30 V
Continuous Collector Current at 25 C:	39 A	Pd - Power Dissipation:	85 W
Minimum Operating Temperature:	- 40 C	Maximum Operating Temperature:	+ 175 C
Packaging:	Tube	Gate-Emitter Leakage Current:	200 nA
Product Type:	IGBT Transistors	Factory Pack Quantity:	30
Subcategory:	IGBTs	Part # Aliases:	RGTV80TK65D