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RGTV80TK65DGVC11 +BOM
IGBT Trench Field Stop 650 V 39 A 85 W Through Hole TO-3PFM
TO-3PFM-3-
Manufacturer:
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Mfr.Part #:
RGTV80TK65DGVC11
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Datasheet:
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IGBT Type:
Trench Field Stop
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Voltage - Collector Emitter Breakdown (Max):
650 V
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Current - Collector (Ic) (Max):
39 A
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Current - Collector Pulsed (Icm):
160 A
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EDA/CAD Models:
Availability: 3024 PCS
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RGTV80TK65DGVC11 General Description
IGBT Transistors 2us Short-Circuit Tolerance, 650V 23A, Built in FRD, TO-3PFM, Field Stop Trench IGBT
Specifications
Category | Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs | Series | - |
IGBT Type | Trench Field Stop | Voltage - Collector Emitter Breakdown (Max) | 650 V |
Current - Collector (Ic) (Max) | 39 A | Current - Collector Pulsed (Icm) | 160 A |
Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 40A | Power - Max | 85 W |
Switching Energy | 1.02mJ (on), 710µJ (off) | Input Type | Standard |
Gate Charge | 81 nC | Td (on/off) @ 25°C | 39ns/113ns |
Test Condition | 400V, 40A, 10Ohm, 15V | Reverse Recovery Time (trr) | 101 ns |
Operating Temperature | -40°C ~ 175°C (TJ) | Mounting Type | Through Hole |
Base Product Number | RGTV80 | Product Category: | IGBT Transistors |
Technology: | Si | Mounting Style: | Through Hole |
Configuration: | Single | Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.5 V | Maximum Gate Emitter Voltage: | - 30 V, 30 V |
Continuous Collector Current at 25 C: | 39 A | Pd - Power Dissipation: | 85 W |
Minimum Operating Temperature: | - 40 C | Maximum Operating Temperature: | + 175 C |
Packaging: | Tube | Gate-Emitter Leakage Current: | 200 nA |
Product Type: | IGBT Transistors | Factory Pack Quantity: | 30 |
Subcategory: | IGBTs | Part # Aliases: | RGTV80TK65D |
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In Stock: 3,024
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
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